Simple and low-temperature vacuum packaging process by using Au/Ta/Ti metal multilayer

Abstract A Au/Ta/Ti metal multilayer was developed to improve the high vacuum packaging process for microdevice fabrication. This study revealed that wafer coated with layer could form direct bonding and absorb residual gas. We investigated effect of Ta thickness on diffusion Ti atoms. The multilayers were successfully bonded after a degassing when barrier is thicker than 1.5 nm. Moreover, film effectively absorbed gas molecules by annealing at 350 °C. As temperature gettering lower previous reports, be useful future process.